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| FDD6680/FDU6680 November 2004 FDD6680 / FDU6680 30V N-Channel PowerTrench(R) MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features * 46 A, 30 V RDS(ON) = 10 m @ VGS = 10 V RDS(ON) = 15 m @ VGS = 4.5 V * Low gate charge * Fast Switching Speed * High performance trench technology for extremely low RDS(ON) Applications * DC/DC converter * Motor Drives D D G S I-PAK (TO-251AA) GDS G D-PAK TO-252 (TO-252) S Absolute Maximum Ratings Symbol VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage TA=25oC unless otherwise noted Parameter Ratings 30 20 (Note 3) (Note 1a) (Note 1a) (Note 3) (Note 1a) (Note 1b) Units V V A Continuous Drain Current @TC=25C @TA=25C Pulsed 46 12 100 56 3.3 1.5 -55 to +175 PD Power Dissipation @TC=25C @TA=25C @TA=25C W TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJC RJA RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 2.7 45 96 C/W Package Marking and Ordering Information Device Marking FDD6680 FDU6680 Device FDD6680 FDU6680 Package D-PAK (TO-252) I-PAK (TO-251) Reel Size 13'' Tube Tape width 12mm N/A Quantity 2500 units 75 (c)2004 Fairchild Semiconductor Corporation FDD6680/FDU6680 Rev. C1(W) FDD6680/FDU6680 Electrical Characteristics Symbol EAS IAS TA = 25C unless otherwise noted Parameter Drain-Source Avalanche Energy Drain-Source Avalanche Current Test Conditions Single Pulse, VDD = 25 V, ID= 12A Min Typ Max Units 180 12 mJ A Drain-Source Avalanche Ratings (Note 2) Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) VGS = 0 V, ID = 250 A 30 24 1 100 V mV/C A nA ID = 250 A,Referenced to 25C VDS = 24 V, VGS = 20 V, VGS = 0 V VDS = 0 V On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 A ID = 250 A,Referenced to 25C VGS = 10 V, ID = 12 A VGS = 4.5 V, ID = 10 A VGS = 10 V, ID = 12 A,TJ=125C VGS = 10 V, VDS = 5 V VDS = 10 V, ID = 12 A 1 1.9 -5 7.7 9.9 11.4 3 V mV/C m 10 15 16 ID(on) gFS 50 47 A S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) 1230 VDS = 15 V, f = 1.0 MHz VGS = 15 mV, V GS = 0 V, 325 150 f = 1.0 MHz 1.5 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge 10 VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 7 29 12 13 VDS = 15V, VGS = 5 V ID = 12 A, 3.5 5.1 19 13 46 21 18 ns ns ns ns nC nC nC FDD6680/FDU6680 Rev. C1(W) FDD6680/FDU6680 Electrical Characteristics Symbol IS VSD trr Qrr TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units 2.3 A V nS nC Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IF = 12 A, IS = 2.3 A (Note 2) diF/dt = 100 A/s 0.76 24 13 1.2 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA = 45C/W when mounted on a 1in2 pad of 2 oz copper b) RJA = 96C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% PD R DS(ON) 3. Maximum current is calculated as: where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD6680/FDU6680 Rev. C1(W) FDD6680/FDU6680 Typical Characteristics 100 1.8 VGS = 10.0V 6.0V 4.5V 5.0V 4.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 3.5V 1.6 80 ID, DRAIN CURRENT (A) 60 1.4 4.0V 4.5V 5.0V 6.0V 3.5V 40 1.2 1 10.0V 20 3.0V 0.8 0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 3 0 20 40 ID, DRAIN CURRENT (A) 60 80 Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.03 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 12A VGS = 10V 1.4 RDS(ON) , ON-RESISTANCE (OHM) 0.025 ID = 6A 1.2 0.02 TA = 125 C 0.015 o 1 TA = 25oC 0.01 0.8 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0.005 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation withTemperature Figure 4. On-Resistance Variation with Gate-to-Source Voltage 1000 IS, REVERSE DRAIN CURRENT (A) 90 VDS = 5V 75 ID, DRAIN CURRENT (A) 60 45 30 15 0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 4.5 25oC TA =-55oC 125 C o VGS = 0V 100 10 1 0.1 0.01 0.001 o TA = 125 C 25oC -55oC 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDD6680/FDU6680 Rev. C1(W) FDD6680/FDU6680 Typical Characteristics 10 1800 ID = 12 A VGS, GATE-SOURCE VOLTAGE (V) 8 VDS = 10V 20V CAPACITANCE (pF) f = 1MHz VGS = 0 V 1500 Ciss 1200 6 15V 900 4 600 Coss 300 2 Crss 0 0 5 10 15 Qg, GATE CHARGE (nC) 20 25 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics 1000 100 P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics 100 ID, DRAIN CURRENT (A) RDS(ON) LIMIT 1ms 10ms 100s 80 SINGLE PULSE RJA = 96C/W TA = 25C 10 1s 10 1 VGS = 4.5V SINGLE PULSE RJA = 96oC/W TA = 25oC DC 100ms 60 40 0.1 20 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.01 0.1 1 t1, TIME (sec) 10 100 Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 R JA (t) = r(t) * R JA R JA = 96 C/W P(pk) t1 t2 T J - T A = P * R JA (t) Duty Cycle, D = t 1 / t2 0.01 0.01 0.001 SINGLE PULSE 0.0001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6680/FDU6680 Rev. C1(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC Across the board. Around the world.TM OPTOPLANARTM PACMANTM The Power Franchise POPTM Programmable Active DroopTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I13 |
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